Wavelength shift of InP-based InAs quantum dot lasers above room temperature.

Wavelength shift of InP-based InAs quantum dot lasers above room temperature. Research Abstract Details 

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Wavelength shift of InP-based InAs quantum dot lasers above room temperature. Abstract Text:

Jin Soo Kim,Cheul-Ro Lee,Kyeong Won Seol,Dae Kon Oh,Jin Soo Kim,Cheul-Ro Lee,Kyeong Won Seol,Dae Kon Oh,

For the InAs quantum dot (QD) lasers based on the InAlGaAs-InAlAs-InP material system, the lasing operation was successfully achieved up to 100 degrees C. The lasing wavelength was linearly increased with a slope of 0.100 nm/K up to 50 degrees C and then, decreased with (-)0.419 nm/K above 50 degrees C. The temperature-induced shift in the lasing wavelength can be attributed to both the band-gap shrinkage and the band-filling effect of carriers, which was well agreed with the characteristic temperatures of the InAs QD laser calculated from the temperature dependence of threshold current density.

Wavelength shift of InP-based InAs quantum dot lasers above room temperature. Publishing Authors By Initials

JS Kim,CR Lee,KW Seol,DK Oh,JS Kim,CR Lee,KW Seol,DK Oh,

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Wavelength shift of InP-based InAs quantum dot lasers above room temperature. Journal Published:

PUBLICATION TYPE: Research Support, Non-U.S. Gov

Journal: Journal of nanoscience and nanotechnology

VOLUME: 7

Page Numbers: 4443-6

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ISSN: 1533-4880

DAY: 20

MONTH: Dec

YEAR: 2007

Wavelength shift of InP-based InAs quantum dot lasers above room temperature. Information

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LANGUAGE: eng

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AFFILIATION: Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Engineering College, Chonbuk National University, Jeonju 561-756, Chonbuk, Korea.

Country: United States

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MEDLINETA: J Nanosci Nanotechnol

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