Ultra temperature-stable bulk-acoustic-wave resonators with SiO2 compensation layer.

Ultra temperature-stable bulk-acoustic-wave resonators with SiO2 compensation layer. Research Abstract Details 

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Ultra temperature-stable bulk-acoustic-wave resonators with SiO2 compensation layer. Abstract Text:

Hongyu Yu,Wei Pang,Hao Zhang,Eun Sok Kim,Hongyu Yu,Wei Pang,Hao Zhang,Eun Sok Kim,

This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/degrees C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO2 on a surface micromachined cantilever that is released by XeF2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO2/Si/SiO2 supporting substrate.

Ultra temperature-stable bulk-acoustic-wave resonators with SiO2 compensation layer. Publishing Authors By Initials

H Yu,W Pang,H Zhang,ES Kim,H Yu,W Pang,H Zhang,ES Kim,

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Ultra temperature-stable bulk-acoustic-wave resonators with SiO2 compensation layer. Journal Published:

PUBLICATION TYPE: Journal Article

Journal: IEEE transactions on ultrasonics, ferroelectrics,

VOLUME: 54

Page Numbers: 2102-9

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ISSN: 0885-3010

DAY: 16

MONTH: Oct

YEAR: 2007

Ultra temperature-stable bulk-acoustic-wave resonators with SiO2 compensation layer. Information

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LANGUAGE: eng

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Grant and Affiliation Information for Ultra temperature-stable bulk-acoustic-wave resonators with SiO2 compensation layer.

AFFILIATION: Department of Electrical Engineering, University of Southern California, Los Angeles, CA, USA. hongyuyu@usc.edu

Country: United States

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MEDLINETA: IEEE Trans Ultrason Ferroelect

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