[Trace analysis of Zn-doped compound semiconductor material by resonant ionization mass spectrometry]

[Trace analysis of Zn-doped compound semiconductor material by resonant ionization mass spectrometry] Research Abstract Details 

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[Trace analysis of Zn-doped compound semiconductor material by resonant ionization mass spectrometry] Abstract Text:

W Peng,Z Jiang,C Guo,K W Ledingham,B C Qiu,

An experimental setup and the procedure for the laser resonant ionization mass spectrometry (RIMS) have been described. Both an optical spectrum and a mass spectum have been shown. The detection limit that can be reached by using this procedure has been estimated.

[Trace analysis of Zn-doped compound semiconductor material by resonant ionization mass spectrometry] Publishing Authors By Initials

W Peng,Z Jiang,C Guo,KW Ledingham,BC Qiu,

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[Trace analysis of Zn-doped compound semiconductor material by resonant ionization mass spectrometry] Journal Published:

PUBLICATION TYPE: Journal Article

Journal: Guang pu xue yu guang pu fen xi = Guang pu

VOLUME: 19

Page Numbers: 16-8

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ISSN: 1000-0593

DAY: 11

MONTH: Feb

YEAR: 1999

[Trace analysis of Zn-doped compound semiconductor material by resonant ionization mass spectrometry] Information

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LANGUAGE: chi

NlmUniqueID: 9424805

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Grant and Affiliation Information for [Trace analysis of Zn-doped compound semiconductor material by resonant ionization mass spectrometry]

AFFILIATION: Department of Physics, Jilin University, 130023 Changchun.

Country: China

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MEDLINETA: Guang Pu Xue Yu Guang Pu Fen X

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