Radio-frequency-preionized xenon z-pinch source for extreme ultraviolet lithography.

Radio-frequency-preionized xenon z-pinch source for extreme ultraviolet lithography. Research Abstract Details 

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Radio-frequency-preionized xenon z-pinch source for extreme ultraviolet lithography. Abstract Text:

M McGeoch,

Intense amplified spontaneous emission is generated in generally axial directions in a recombining uniform Z pinch. This effect allows the generation of highly efficient soft x-ray beams, including the intense xenon-band emission at 134 ?, of interest for extreme ultraviolet lithography. We discuss the characteristics of this source, including optimization of the xenon-helium mix and measurements of source size, brightness, and positional and amplitude stability. The issues involved in increasing power to the lithography class by an increase in the repetition rate are discussed. The life and operating costs of a lithography source are considered.

Radio-frequency-preionized xenon z-pinch source for extreme ultraviolet lithography. Publishing Authors By Initials

M McGeoch,

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Radio-frequency-preionized xenon z-pinch source for extreme ultraviolet lithography. Journal Published:

PUBLICATION TYPE: Journal Article

Journal: Applied optics

VOLUME: 37

Page Numbers: 1651-8

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ISSN: 0003-6935

DAY: 20

MONTH: Mar

YEAR: 1998

Radio-frequency-preionized xenon z-pinch source for extreme ultraviolet lithography. Information

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LANGUAGE: eng

NlmUniqueID: 247660

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Country: United States

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MEDLINETA: Appl Opt

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