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Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer.

Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer. Research Abstract Details 

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  • Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer. Abstract Text:

    haohai yuHaohai Yu,huaijin zhangHuaijin Zhang,zhengping wangZhengping Wang,jiyang wangJiyang Wang,yonggui yuYonggui Yu,minhua jiangMinhua Jiang,dingyuan tangDingyuan Tang,guoqiang xieGuoqiang Xie,hang luoHang Luo,haohai yuHaohai Yu,huaijin zhangHuaijin Zhang,zhengping wangZhengping Wang,jiyang wangJiyang Wang,yonggui yuYonggui Yu,minhua jiangMinhua Jiang,dingyuan tangDingyuan Tang,guoqiang xieGuoqiang Xie,hang luoHang Luo,

    We report on the passive mode locking of a diode-pumped Nd:LuVO(4) laser with a GaAs wafer as output coupler. Using the interference modulation effect of the GaAs wafer, high-power continuous-wave mode locking with a pulse width of about 7.1 ps and an average output power of 3.11 W was achieved. Our result shows that Nd:LuVO(4) could be an excellent gain medium for diode-pumped high-power mode-locked lasers.

    Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer. Publishing Authors By Initials

    h yuH Yu,h zhangH Zhang,z wangZ Wang,j wangJ Wang,y yuY Yu,m jiangM Jiang,d tangD Tang,g xieG Xie,h luoH Luo,h yuH Yu,h zhangH Zhang,z wangZ Wang,j wangJ Wang,y yuY Yu,m jiangM Jiang,d tangD Tang,g xieG Xie,h luoH Luo,

    For similar abstracts research abstracts see: abstracts research

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    Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer. Journal Published:

    PUBLICATION TYPE: Journal Article

    Journal: Optics letters

    VOLUME: 33

    Page Numbers: 225-7

    Journal Abbreviation:

    ISSN: 0146-9592

    DAY: 1

    MONTH: Feb

    YEAR: 2008

    Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer. Information

    Number of References:

    LANGUAGE: eng

    NlmUniqueID: 7708433

    Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer. Keywords Mesh Terms:

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    Grant and Affiliation Information for Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer.

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    Country: United States

    United States Research PublicationUnited States Research Publication

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    MEDLINETA: Opt Lett

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