Insulating tubular BN sheathing on semiconducting nanowires.

Insulating tubular BN sheathing on semiconducting nanowires. Research Abstract Details 

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Insulating tubular BN sheathing on semiconducting nanowires. Abstract Text:

Ying-Chun Zhu,Yoshio Bando,Dong-Feng Xue,Fang-Fang Xu,Dmitri Golberg,

An effective method was developed for generation of insulating tubular boron nitride (BN)-sheathed nanostructures. ZnS nanowires and multilayered Si-SiO2 nanowires were successfully sheathed with insulating tubular BN-forming nanocables. Both the semiconductor nanowire cores and the BN sheaths are crystalline with well-uniform morphologies.

Insulating tubular BN sheathing on semiconducting nanowires. Publishing Authors By Initials

YC Zhu,Y Bando,DF Xue,FF Xu,D Golberg,

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Insulating tubular BN sheathing on semiconducting nanowires. Journal Published:

PUBLICATION TYPE: Journal Article

Journal: Journal of the American Chemical Society

VOLUME: 125

Page Numbers: 14226-7

Journal Abbreviation: J. Am. Chem. Soc.

ISSN: 0002-7863

DAY: 26

MONTH: Nov

YEAR: 2003

Insulating tubular BN sheathing on semiconducting nanowires. Information

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LANGUAGE: eng

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Grant and Affiliation Information for Insulating tubular BN sheathing on semiconducting nanowires.

AFFILIATION: Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-044, Japan. yingchunzhu@yahoo.com

Country: United States

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MEDLINETA: J Am Chem Soc

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