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High surface area of porous silicon drives desorption of intact molecules.

High surface area of porous silicon drives desorption of intact molecules. Research Abstract Details 

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  • High surface area of porous silicon drives desorption of intact molecules. Abstract Text:

    trent r northenTrent R Northen,hin-koon wooHin-Koon Woo,michael t northenMichael T Northen,anders Anders ,winnie uritboonthailWinnie Uritboonthail,kimberly l turnerKimberly L Turner,gary siuzdakGary Siuzdak,trent r northenTrent R Northen,hin-koon wooHin-Koon Woo,michael t northenMichael T Northen,anders Anders ,winnie uritboonthailWinnie Uritboonthail,kimberly l turnerKimberly L Turner,gary siuzdakGary Siuzdak,

    The surface structure of porous silicon used in desorption/ionization on porous silicon (DIOS) mass analysis is known to play a primary role in the desorption/ionization (D/I) process. In this study, mass spectrometry and scanning electron microscopy (SEM) are used to examine the correlation between intact ion generation with surface ablation and surface morphology. The DIOS process is found to be highly laser energy dependent and correlates directly with the appearance of surface ions (Si(n)(+) and OSiH(+)). A threshold laser energy for DIOS is observed (10 mJ/cm(2)), which supports that DIOS is driven by surface restructuring and is not a strictly thermal process. In addition, three DIOS regimes are observed that correspond to surface restructuring and melting. These results suggest that higher surface area silicon substrates may enhance DIOS performance. A recent example that fits into this mechanism is the surface of silicon nanowires, which has a high surface energy and concomitantly requires lower laser energy for analyte desorption.

    High surface area of porous silicon drives desorption of intact molecules. Publishing Authors By Initials

    tr northenTR Northen,hk wooHK Woo,mt northenMT Northen,a A ,w uritboonthailW Uritboonthail,kl turnerKL Turner,g siuzdakG Siuzdak,tr northenTR Northen,hk wooHK Woo,mt northenMT Northen,a A ,w uritboonthailW Uritboonthail,kl turnerKL Turner,g siuzdakG Siuzdak,

    For similar abstracts research abstracts see: abstracts research

    PUBMED ID PMID:

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    High surface area of porous silicon drives desorption of intact molecules. Journal Published:

    PUBLICATION TYPE: Research Support, U.S. Gov't,

    Journal: Journal of the American Society for Mass Spectrome

    VOLUME: 18

    Page Numbers: 1945-9

    Journal Abbreviation: J. Am. Soc. Mass Spectrom.

    ISSN: 1044-0305

    DAY: 22

    MONTH: 08

    YEAR: 2007

    High surface area of porous silicon drives desorption of intact molecules. Information

    Number of References:

    LANGUAGE: eng

    NlmUniqueID: 9010412

    High surface area of porous silicon drives desorption of intact molecules. Keywords Mesh Terms:

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    Chemical & Substance for Abstract: High surface area of porous silicon drives desorption of intact molecules. Information

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    Grant and Affiliation Information for High surface area of porous silicon drives desorption of intact molecules.

    AFFILIATION: Center for Mass Spectrometry, The Scripps Research Institute, La Jolla, California 92037, USA.

    Country: United States

    United States Research PublicationUnited States Research Publication

    AGENCY: United States NIMH

    GRANT: P30 MH062261-07

    ACRONYM: MH

    MEDLINETA: J Am Soc Mass Spectrom

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