Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.

Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs. Research Abstract Details 

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Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs. Abstract Text:

M Tani,S Matsuura,K Sakai,S Nakashima,

Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers.

Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs. Publishing Authors By Initials

M Tani,S Matsuura,K Sakai,S Nakashima,

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Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs. Journal Published:

PUBLICATION TYPE: Journal Article

Journal: Applied optics

VOLUME: 36

Page Numbers: 7853-9

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ISSN: 0003-6935

DAY: 20

MONTH: Oct

YEAR: 1997

Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs. Information

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LANGUAGE: eng

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Country: United States

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MEDLINETA: Appl Opt

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