Electrical and reliability properties of PZT thin films for ULSI DRAM applications.

Electrical and reliability properties of PZT thin films for ULSI DRAM applications. Research Abstract Details 

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Electrical and reliability properties of PZT thin films for ULSI DRAM applications. Abstract Text:

J Carrano,C Sudhama,V Chikarmane,J Lee,A Tasch,W Shepherd,N Abt,

The electrical and reliability characteristics of ferroelectric capacitors fabricated using sol-gel derived 50/50 lead-zirconate-titanate (PZT) thin films have been examined for ULSI DRAM (dynamic random access memory) applications. Various electrode materials, film thicknesses (200 nm to 600 nm) and capacitor areas were used. A large stored-energy density (Q(c)) of 15 muC/cm(2) (at 125 kV/cm) was measured using different methods. The results indicate that PZT thin films exhibit material properties which might satisfy the requirements of ULSI DRAMs.

Electrical and reliability properties of PZT thin films for ULSI DRAM applications. Publishing Authors By Initials

J Carrano,C Sudhama,V Chikarmane,J Lee,A Tasch,W Shepherd,N Abt,

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Electrical and reliability properties of PZT thin films for ULSI DRAM applications. Journal Published:

PUBLICATION TYPE: Journal Article

Journal: IEEE transactions on ultrasonics, ferroelectrics,

VOLUME: 38

Page Numbers: 690-703

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ISSN: 0885-3010

DAY: 12

MONTH: 02

YEAR: 1991

Electrical and reliability properties of PZT thin films for ULSI DRAM applications. Information

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LANGUAGE: eng

NlmUniqueID: 9882735

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Grant and Affiliation Information for Electrical and reliability properties of PZT thin films for ULSI DRAM applications.

AFFILIATION: Dept. of Electr. and Comput. Eng., Texas Univ., Austin, TX.

Country: United States

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MEDLINETA: IEEE Trans Ultrason Ferroelect

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