Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions.

Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions. Research Abstract Details 

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Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions. Abstract Text:

Casey W Miller,Zhi-Pan Li,Ivan K Schuller,R W Dave,J M Slaughter,Johan Akerman,

Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schrödinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.

Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions. Publishing Authors By Initials

CW Miller,ZP Li,IK Schuller,RW Dave,JM Slaughter,J Akerman,

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Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions. Journal Published:

PUBLICATION TYPE: Research Support, U.S. Gov't,

Journal: Physical review letters

VOLUME: 99

Page Numbers: 047206

Journal Abbreviation: Phys. Rev. Lett.

ISSN: 0031-9007

DAY: 27

MONTH: 07

YEAR: 2007

Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions. Information

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LANGUAGE: eng

NlmUniqueID: 401141

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Grant and Affiliation Information for Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions.

AFFILIATION: Department of Physics, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093, USA.

Country: United States

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MEDLINETA: Phys Rev Lett

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