Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes.

Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes. Research Abstract Details 

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Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes. Abstract Text:

Hisashi Masui,Natalie N Fellows,Hitoshi Sato,Hirokuni Asamizu,Shuji Nakamura,Steven P DenBaars,Hisashi Masui,Natalie N Fellows,Hitoshi Sato,Hirokuni Asamizu,Shuji Nakamura,Steven P DenBaars,

A metal layer formed on the backside of InGaN/sapphire-based light-emitting diodes deteriorates the inherent optical power output. An experimental approach of a suspended die is employed to study the effects of such metal layers via a direct comparison in radiant flux from a discrete die with and without a reflector. A sphere package that employs no reflector is proposed and fabricated. Light extraction of the sphere design is discussed; a light source in the sphere package would not have to be either an ideal point or placed at the center of the sphere, due to a finite critical angle at the sphere/air interface.

Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes. Publishing Authors By Initials

H Masui,NN Fellows,H Sato,H Asamizu,S Nakamura,SP DenBaars,H Masui,NN Fellows,H Sato,H Asamizu,S Nakamura,SP DenBaars,

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Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes. Journal Published:

PUBLICATION TYPE: Research Support, Non-U.S. Gov

Journal: Applied optics

VOLUME: 46

Page Numbers: 5974-8

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ISSN: 0003-6935

DAY: 10

MONTH: Aug

YEAR: 2007

Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes. Information

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LANGUAGE: eng

NlmUniqueID: 247660

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Grant and Affiliation Information for Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes.

AFFILIATION: Materials Department, College of Engineering, University of California, Santa Barbara, California 93106-5050, USA. masui@engineering.ucsb.edu

Country: United States

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MEDLINETA: Appl Opt

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