On the surface of silicon nanowires (SiNWs) synthesized by gold (Au)-catalyzed chemical vapor deposition (CVD), Au particles 5-20 nm in diameter are formed if the growth conditions are within a specific range. We studied the mechanism of Au particle formation by growing SiNWs under different conditions, specifically by dynamically changing the growth parameters during the growth process. We show that insufficient supply of Si source to the Au-Si eutectic on top of the SiNWs enhances the migration of Au atoms on the surface of SiNWs in the form of Au-Si eutectic, which is precipitated on the surface as Au particles during cooling. We also show that using Au-Si eutectic on the surface of SiNWs as a catalyst enables one-step growth of branched SiNWs.
Control of surface migration of gold particles on si nanowires. Publishing Authors By Initials
Control of surface migration of gold particles on si nanowires. Journal Published:
PUBLICATION TYPE: Journal Article
Journal: Nano letters
VOLUME: 8
Page Numbers: 362-8
Journal Abbreviation: Nano Lett.
ISSN: 1530-6984
DAY: 21
MONTH: 12
YEAR: 2007
Control of surface migration of gold particles on si nanowires. Information
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LANGUAGE: eng
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Grant and Affiliation Information for Control of surface migration of gold particles on si nanowires.
AFFILIATION: Matsushita Electric Industrial Co., Ltd. 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan, and Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan.
Country: United States
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MEDLINETA: Nano Lett
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