A silicon electrostatic ultrasonic transducer.

A silicon electrostatic ultrasonic transducer. Research Abstract Details 

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A silicon electrostatic ultrasonic transducer. Abstract Text:

K Suzuki,K Higuchi,H Tanigawa,

An electric ultrasonic transducer is developed by using a silicon IC process. Design considerations are first presented to obtain high sensitivity and the desired frequency responses in air. The measured transmitter sensitivity is 19.1 dB (0 dB=1 mubar/V) at a point 50 cm away from the devices, when the devices are operated at 150 kHz. The receiving sensitivity is 0.47 mV/Pa in the 10-130-kHz range, with bias voltages as low as 30 V. An electronic sector scanning operation is also achieved by time-sequentially driving seven elements arranged in a linear array on the same chip. The results should be helpful in the design of phased-array transducers integrated with electronic scanning circuits.

A silicon electrostatic ultrasonic transducer. Publishing Authors By Initials

K Suzuki,K Higuchi,H Tanigawa,

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A silicon electrostatic ultrasonic transducer. Journal Published:

PUBLICATION TYPE: Journal Article

Journal: IEEE transactions on ultrasonics, ferroelectrics,

VOLUME: 36

Page Numbers: 620-7

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ISSN: 0885-3010

DAY: 21

MONTH: 02

YEAR: 1989

A silicon electrostatic ultrasonic transducer. Information

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LANGUAGE: eng

NlmUniqueID: 9882735

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Grant and Affiliation Information for A silicon electrostatic ultrasonic transducer.

AFFILIATION: NEC Corp., Kanagawa.

Country: United States

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MEDLINETA: IEEE Trans Ultrason Ferroelect

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